▎ 摘　　要

NOVELTY - The method involves forming a target nanostructure i.e. vanadium oxide nanowire (20), on a multi-layered graphene (10). A multi-layered graphene nanostructure i.e. graphene nanoribbon (12), is formed by performing anisotropic etching using the target nanostructure as a mask. A solution comprising dispersed graphene nanostructures are formed by dispersing the multi-layered graphene nanostructure in a dispersion solvent. The oxide nanostructure is adhered on the multi-layered graphene nanostructure by Vander Waals force. USE - Method for manufacturing graphene nanostructure solution for manufacturing a graphene nano device that is utilized in a semiconductor device. ADVANTAGE - The graphene nanostructures having a uniform width obtained by etching using the oxide nanowire as a mask are dispersed in the dispersion solvent, thus enabling manufacture of a solution having dispersed nanostructure graphenes of uniform width. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a graphene nano device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a method of manufacturing a solution including dispersed graphene nanostructures. Multi-layered graphene (10) Graphene layers (11) Graphene nanoribbon (12) Graphene nanoribbon (13) Vanadium oxide nanowire (20)