• 专利标题:   Method for manufacturing graphene thin film of capacitor, involves manufacturing precursor solution, dispersing graphite oxide powder into solvent, and forming graphene thin film by generation of static attraction.
  • 专利号:   KR2011121569-A, KR1260433-B1
  • 发明人:   KIM K B, HEECHANG Y, SEONG M B, BEOM K G, CHANG Y H, MIN P S
  • 专利权人:   UNIV YONSEI IND ACADEMIC COOP FOUND
  • 国际专利分类:   B05D005/12, C01B031/02, C23C016/26, H01B001/04
  • 专利详细信息:   KR2011121569-A 07 Nov 2011 C01B-031/02 201224 Pages: 14
  • 申请详细信息:   KR2011121569-A KR040229 28 Apr 2011
  • 优先权号:   KR040474

▎ 摘  要

NOVELTY - A graphene thin film manufacturing method involves manufacturing precursor solution, and dispersing graphite oxide powder into solvent, where a graphene thin film is formed by generation of static attraction according to electric potential difference between the precursor solution and a substrate. USE - Method for manufacturing a graphene thin film of a capacitor (claimed). ADVANTAGE - The graphene thin film and the substrate are provided with better adhesive property by avoiding the use of additive and the decreased performance of the graphene, thus achieving better property of the graphene. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a heat supply unit for supplying heat to an injection system (2) a capacitor comprising a grapheme thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a scanning electron microscopy photographic representation of a surface of a graphene thin film.