▎ 摘　　要

NOVELTY - The method involves preparing (1) graphene material on the substrate. The photoresist is spin coated (2) on the graphene material. The photoresist on the graphene material is etched (3) by supplying solution to form photo-resist of source-drain pattern. The graphene material is etched (4) from the source and drain regions. The electronic beam evaporation or sputtering process is performed (5) on the surface of the sample by deposition of metals. The surface of the sample source and drain of photoresist is peeled (6) off to form graphene-metal Ohmic contact region. USE - Method for forming graphene-metal Ohmic contact region. ADVANTAGE - The metal-graphene Ohmic contact can be formed efficiently. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating the process for forming graphene-metal Ohmic contact region. (Drawing includes non-English language text) Step for preparing layers of graphene material on substrate (1) Step for spin coating photoresist on graphene material layers (2) Step for etching photoresist on the graphene material layer (3) Step for etching graphene material to from source and drain regions (4) Step for performing electronic beam evaporation or sputtering on surface of sample (5) Step for peeling off surface of sample source and drain of photoresist (6)