▎ 摘　　要

NOVELTY - A micro light emitting semiconductor device (100) includes a first semiconductor layer (110), a light emitting layer (115) provided on the first semiconductor layer, a second semiconductor layer (120) provided on the light emitting layer, and a color conversion layer (130) provided on the second semiconductor layer, where the color conversion layer comprises a porous layer (131) containing quantum dots (132), and a doping-type of the second semiconductor layer is different from a doping-type of the color conversion layer. USE - Micro light emitting semiconductor device used for display apparatus (claimed). ADVANTAGE - The semiconductor device has reduced manufacturing cost, increases luminous efficiency. The interlayer separates the color conversion layer from the micro light emitting chip and prevent characteristics of the color conversion layer from being reduced due to light from the micro light emitting chip. The manufacturing method of the micro light emitting semiconductor device is simple and economical. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a display apparatus, which includes a substrate, partition walls provided on the substrate and spaced apart from each other, and micro light emitting semiconductor devices respectively provided in wells partitioned by the partition walls; and (2) method for manufacturing the micro light emitting semiconductor device, which involves: (a) forming a first semiconductor layer on a first substrate; (b) forming a light emitting layer on the first semiconductor layer; (c) forming a second semiconductor layer on the light emitting layer; (d) stacking a u-gallium nitride layer (105) and n-gallium nitride layer on a second substrate; (e) bonding the n-gallium nitride layer to the second semiconductor layer; (f) separating the u-gallium nitride layer from the n-gallium nitride layer; (g) forming a porous layer by etching the n-gallium nitride layer through electrochemical etching; (h) forming a color conversion layer by immersing the porous layer in a quantum dot liquid to infiltrate quantum dots into the porous layer; and (i) separating a structure formed by above operations in units of microchips. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the micro light emitting semiconductor device. 100Micro light emitting semiconductor device 105u-Gallium nitride layer 110First semiconductor layer 115Light emitting layer 120Second semiconductor layer 130Color conversion layer 131Porous layer 132Quantum dots