• 专利标题:   Graphene/silicon schottky junction column array photovoltaic cell for solar battery, has metal front electrode deposited around window of silicon oxide isolation layer and graphene film or spin coating on silicon rod array.
  • 专利号:   CN102254963-A
  • 发明人:   FENG T, LI X, REN T, SONG R, TIAN H, WU D, XIE D, ZHU H
  • 专利权人:   UNIV TSINGHUA
  • 国际专利分类:   H01L031/0236, H01L031/04, H01L031/18
  • 专利详细信息:   CN102254963-A 23 Nov 2011 H01L-031/0236 201201 Pages: 10 Chinese
  • 申请详细信息:   CN102254963-A CN10217022 29 Jul 2011
  • 优先权号:   CN10217022

▎ 摘  要

NOVELTY - The cell has a single crystal silicon substrate (1) provided with a thermal oxidation developing silicon oxide isolation layer (2). The single crystal silicon substrate is provided with a metal back electrode (3) for producing a silicon rod array (4). The silicon oxide isolation layer is equipped with a window to form effective junction area. A metal front electrode (5) is deposited around the window of the silicon oxide isolation layer and a graphene film (6) or spin coating on the silicon rod array. USE - Graphene/silicon schottky junction column array photovoltaic cell for a solar battery. ADVANTAGE - The cell is simple in structure and easy to manufacture, reduces reflection of incident light, and increases contact area between Schottky junctions, thus improving conversion efficiency of a solar battery in an effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a graphene/silicon schottky junction column array photovoltaic cell. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene/silicon schottky junction column array photovoltaic cell. Single crystal silicon substrate (1) Thermal oxidation developing silicon oxide isolation layer (2) Metal back electrode (3) Silicon rod array (4) Metal front electrode (5) Graphene film (6)