▎ 摘　　要

NOVELTY - Making an epitaxial structure (40) comprises: providing a substrate (100) having an epitaxial growth surface; forming an epitaxial growth surface defining a pattern by etching the epitaxial growth surface, where the pattern comprises many grooves (103) on the epitaxial growth surface; making a graphene layer (110) on the epitaxial growth surface; and epitaxially growing an epitaxial layer (120) on the epitaxial growth surface. USE - The method is useful for making an epitaxial structure (claimed) which is useful to produce electronics with higher performance. ADVANTAGE - The method: provides relatively less dislocation for the epitaxial layer grown on the substrate; forms the graphene layer which is a patterned structure, in which the thickness and the aperture is in nanometer scale, thus the dislocation is further reduced and the quality of the epitaxial layer is improved; reduces the contact surface between the epitaxial layer and the substrate, and reduces the stress between them due to the existence of the graphene layer, thus the substrate can be used to grow a relatively thicker epitaxial layer; forms the graphene layer which is a freestanding structure, thus it can be directly placed on the substrate; and is simple and cost effective. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the epitaxial structure. Epitaxial structure (40) Substrate (100) Grooves (103) Graphene layer (110) Epitaxial layer (120)