▎ 摘　　要

NOVELTY - The forming method involves providing a dielectric body (1206) with a trench (1216) formed in the upper surface (1208) of the dielectric body. A first layer is formed within the trench, in which the first layer is made up of amorphous carbon. A second layer is above the first layer, in which the second layer is made up of metal. The dielectric body, the first layer, and the second layer are heated, so to convert the amorphous carbon to graphene. USE - Forming method for graphene barriers for interconnects e.g., formed in trenches in interlayer dielectrics. ADVANTAGE - Compatible with conventionally semiconductor substrate processing techniques e.g., back end of the line processing, as the processing temperatures used to form the graphene (e.g., the annealing temperature) may be below about 900 degrees Celsius, since graphene is used in interconnect barriers. The graphene provides a very thin and conformal barrier that suitably prevents the diffusion of the material of the interconnect e.g., copper, into the dielectric material. The graphene-encapsulated metal e.g., copper may be useful as a conductor for high current densities since a graphene is present in layer above the seed layer after the annealing process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a microelectronic assembly formation method. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional schematic view of combinatorial processing and evaluation using primary, secondary, and tertiary screening. Microelectronic device (1204) Dielectric body (1206) Upper surface (1208) Trench (1216) Plug (1228)