• 专利标题:   Doping stable graphene comprises wrapping doping reagent between graphenes, and wrapping graphene between substrates.
  • 专利号:   CN104528698-A, CN104528698-B
  • 发明人:   GAO X, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D
  • 专利权人:   CHONGQING MOXI TECHNOLOGY CO LTD, CHINESE ACAD SCI CHONGQING GREEN INTEL, CHONGQING GRAPHENE TECH CO LTD
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104528698-A 22 Apr 2015 C01B-031/04 201546 Pages: 12 Chinese
  • 申请详细信息:   CN104528698-A CN10803300 22 Dec 2014
  • 优先权号:   CN10803300

▎ 摘  要

NOVELTY - Doping stable graphene comprises wrapping doping reagent between graphenes, and wrapping graphene between substrates. The wrapping of doping reagent between graphene comprises growing graphene on copper foil via chemical vapor deposition method; etching copper foil using copper etching solution, washing with water, drying to get temporary substrate/graphene layer samples, adhering graphene sample and substrate, removing temporary substrate, doping graphene plane with doping solution, washing with water, drying to get graphene samples with dopant; and bonding to temporary substrate. USE - Method for doping stable graphene (claimed). ADVANTAGE - The method ensures long-term stability. DETAILED DESCRIPTION - Doping stable graphene comprises wrapping doping reagent between graphenes, and wrapping graphene between substrates. The wrapping of doping reagent between graphene comprises growing graphene on copper foil via chemical vapor deposition (CVD) method; etching copper foil using copper etching solution, washing with water, drying to get temporary substrate/graphene layer samples, adhering graphene sample and substrate bonding side, removing temporary substrate, doping graphene plane with doping solution, washing with water, drying to get graphene samples with dopant; and bonding to temporary substrate/graphene layer, and removing temporary substrate to form substrate-graphene-dopant-graphene structure. The wrapping of graphene between substrates comprises growing graphene on copper foil via CVD method, bonding temporary substrate onto graphene; etching copper foil using copper etching solution to obtain temporary substrate/graphene samples, doping graphene with doped liquid, adhering graphene and substrate, removing temporary substrate to get substrate-dopant-graphene-like sheets; or placing copper/graphene into etching solution with dopant, etching and doping, bonding doped graphene to temporary substrate, removing temporary substrate to obtain substrate-dopant-graphene structure.