▎ 摘　　要

NOVELTY - The structure has a first portion of a conductive layer. The conductive layer includes at least one graphene layers. The first portion of the conductive layer includes a first interface portion and a second interface portion opposite to each other. The first interface portion and the second interface portion includes a metal between adjacent multiple graphene layers. A second portion of the conductive layer is adjacent to the first portion of the conductive layer. The second portion of the conductive layer includes a third interface portion and a fourth interface portion facing each other. The third interface portion and the fourth interface portion includes that the metal is located between adjacent multiple graphene layer. A dielectric material is placed between the first portion and the second portion of the conductive layer. The dielectric material contacts the first interface portion and the third interface portion. USE - The intraconnection structure is useful in a post-section process of an integrated circuit (IC) i.e. semiconductor device. ADVANTAGE - The intraconnection structure is simple and cost-efficient. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of one of various stages of fabricating a semiconductor device. 100Semiconductor device structure 102Substrate 104Source/drain regions 108Channel area 112Interface dielectric layer 114Gate dielectric layer 116Compliant layer 118Gate spacers 120Silicide layer 122Conductive contacts 124Contact etch stop layer 126Interlayer dielectric layer 128Dielectric material 130Conductive contact 200Device