▎ 摘　　要

NOVELTY - Preparing grapheme in situ growth of nano silicon carbide materials comprises adding alcohol aqueous solution into grapheme, stirring, ultrasonic dispersion, adding ethyl orthosilicate into graphene dispersion, stirring, using obtained graphene/silicon dioxide composite powders by sol gel method, adding catalyst into graphene/mixed solution, continuous magnetic stirring, filtering, washing, vacuum drying, grinding, placing into graphite crucible and sintering at 1100-2100 degrees C for 0.5-5 hours and cooling to room temperature. USE - The method is useful for preparing grapheme in situ growth of nano silicon carbide material (claimed). ADVANTAGE - The method: is simple and requires short time. DETAILED DESCRIPTION - Preparing grapheme in situ growth of nano silicon carbide materials comprises (a) adding alcohol aqueous solution into grapheme, stirring, ultrasonic dispersion for 0.5-5 hours, where the concentration of graphene dispersion is 0.5-5 g/l, (b) where the mass ratio of orthosilicate and graphene is 20:1-1:1, adding ethyl orthosilicate into graphene dispersion, stirring to fully dissolve graphene and tetraethyl orthosilicate mixing, (c) using obtained graphene/silicon dioxide composite powders by sol gel method, adding catalyst into graphene/mixed solution, continuous magnetic stirring, where the reaction temperature at 40-80 degrees C for 1-12 hours, filtering, washing repeatedly using deionized water and anhydrous ethanol, vacuum drying for 12-72 hours at 60-120 degrees C, (d) taking graphene/silicone dioxide composite powder, grinding uniformly, placing into graphite crucible and adding argon gas protection and vacuum sintering at 1100-2100 degrees C for 0.5-5 hours, cooling to room temperature.