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  • 专利标题:   Preparation of graphene thin film, involves providing copper foil, electrochemically etching surface of copper foil, and growing graphene thin film by chemical vapor deposition on surface of copper foil.
  • 专利号:   CN105220214-A, CN105220214-B
  • 发明人:   CAI W, FANG X, CHEN X, WANG C
  • 专利权人:   SHANGHAI ADVANCED RES INST CHINESE ACAD, SHANGHAI ADVANCED RES INST CHINESE ACAD
  • 国际专利分类:   C23C016/26, C25F003/02
  • 专利详细信息:   CN105220214-A 06 Jan 2016 C25F-003/02 201637 Pages: 10 English
  • 申请详细信息:   CN105220214-A CN10778938 13 Nov 2015
  • 优先权号:   CN10778938

▎ 摘　　要

NOVELTY - Preparation of graphene thin film, involves providing a copper foil, electrochemically etching the surface of copper foil, and growing graphene thin film by chemical vapor deposition on the surface of copper foil. USE - Preparation of graphene thin film (claimed). ADVANTAGE - The method forms multilayered graphene thin film with large area and controlled layer number.