• 专利标题:   Gas sensor of graphene-tungsten disulfide composite material comprises silicon substrate layer, silicon dioxide insulating layer, electrode layer, graphene layer and tungsten-disulfide layer, large electrode is located at two ends of tooth inserting electrode.
  • 专利号:   CN114544715-A
  • 发明人:   WANG S, ZHANG X, ZHANG H, ZHU P, TANG F
  • 专利权人:   UNIV JIANGSU SCI TECHNOLOGY
  • 国际专利分类:   B82Y015/00, B82Y040/00, C01B032/205, C01G041/00, G01N027/12
  • 专利详细信息:   CN114544715-A 27 May 2022 G01N-027/12 202285 Chinese
  • 申请详细信息:   CN114544715-A CN10183282 24 Feb 2022
  • 优先权号:   CN10183282

▎ 摘  要

NOVELTY - Gas sensor of graphene-tungsten disulfide composite material comprises a silicon substrate layer (1), a silicon dioxide insulating layer (2), an electrode layer (3), a graphene layer (4) and a tungsten disulfide layer (5). The silicon dioxide insulation layer is covered on the surface of the silicon dioxide substrate layer. The electrode layer is arranged on the silicon oxide insulation layer surface, and the electrode layer includes a tooth inserting electrode and a large electrode (3-2). The large electrode is located at the two ends of the tooth insertion electrode. The thickness of graphene layer on tungsten disulfide layer is less than 10 nm, and is coated on the graphene portion by a liquid moving gun. USE - Gas sensor of graphene-tungsten disulfide composite material . ADVANTAGE - The electrical test is easy to cause the defect of the layered stack, two material are complementary to improve the sensitivity of the sensor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the preparation method sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of gas sensor of graphene-tungsten disulfide composite material. 1Silicon substrate layer 2Silicon dioxide insulating layer 3Electrode layer 3-1Tooth inserting electrode 3-2Large electrode 4Graphene layer 5Tungsten disulfide layer