▎ 摘　　要

NOVELTY - Preparing a multilayer article from a semiconductor substrate (30), involves forming a metal film on the front surface of the semiconductor substrate, where the metal film comprises a front metal film surface, a back metal film surface, and a bulk metal region between the front and back metal film surfaces; forming a layer of boron nitride between the front surface of the semiconductor substrate and the back metal film surface; and forming a layer of graphene between the front surface of the semiconductor substrate and the back metal film surface. USE - For preparing a multilayer article (claimed). ADVANTAGE - The method prepares graphene layer directly on a semiconductor substrate, i.e. without a layer transfer step and direct formation on the semiconductor substrate does not preclude the presence of an intervening layer, e.g., a layer of an isoelectronic material such as boron nitride; and that graphene exhibits high thermal conductivity, high mechanical strength (strongest nanomaterial), high optical transparency (97%), carrier controlled interband/optical-transition and flexible structure. DETAILED DESCRIPTION - Preparing a multilayer article from a semiconductor substrate (30) comprising two major, generally parallel surfaces, one of which is the front surface of the semiconductor substrate and the other of which is a back surface of the semiconductor substrate, and a circumferential edge joining the front and back semiconductor substrate surfaces, involves forming a metal film on the front surface of the semiconductor substrate, where the metal film comprises a front metal film surface, a back metal film surface, and a bulk metal region between the front and back metal film surfaces, where the back metal film surface is in contact with the front semiconductor substrate surface; forming a layer of boron nitride between the front surface of the semiconductor substrate and the back metal film surface; and forming a layer of graphene between the front surface of the semiconductor substrate and the back metal film surface. INDEPENDENT CLAIMS are included for the following: (1) preparing a semiconductor substrate involving forming a first metal film on the front surface of the semiconductor substrate; forming a layer of boron nitride between the front surface of the semiconductor substrate and the back metal film surface; removing the first metal film; depositing a layer comprising a carbon-rich polymer on the layer of boron-nitride; forming a second metal film on the carbon-rich polymer layer, where the second metal film comprises a front metal film surface, a back metal film surface, and a bulk metal region between the front and back metal film surfaces, where the back metal film surface is in contact with the layer comprising the carbon-rich polymer; and heating the semiconductor substrate comprising the layer of boron-nitride, where the layer comprises the carbon-rich polymer, and the second metal film on it in the presence of hydrogen to a temperature sufficient to degrade the carbon-rich polymer layer; and precipitating carbon atoms to thereby form a layer of graphene between the layer of boron nitride and the back metal film surface; and (2) a multilayer article comprising a semiconductor substrate comprising two major, generally parallel surfaces, one of which is the front surface of the donor substrate and the other of which is a back surface of the donor substrate, a circumferential edge joining the front and back surfaces, and a central plane between the front and back surfaces; a layer of boron nitride in contact with the front surface of the semiconductor substrate; and a layer of graphene in contact with the layer of boron nitride. DESCRIPTION OF DRAWING(S) - The figure shows initial structure of the semiconductor substrate. Carbon-containing gas (12) Gas (22) Semiconductor substrate (30) Dielectric layer (40) Metal layer (50)