• 专利标题:   Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.
  • 专利号:   CN103183524-A
  • 发明人:   GUO H, LEI T, WEI C, ZHANG Y, ZHANG C
  • 专利权人:   UNIV XIDIAN
  • 国际专利分类:   C01B031/04, C04B041/50, C04B041/85
  • 专利详细信息:   CN103183524-A 03 Jul 2013 C04B-041/50 201379 Pages: 9 Chinese
  • 申请详细信息:   CN103183524-A CN10078982 12 Mar 2013
  • 优先权号:   CN10078982

▎ 摘  要

NOVELTY - A graphene preparation method involves introducing argon and carbon tetrachloride gas into quartz tube mixing chamber, reacting with silicon carbide for 20-100 minutes to generate carbon film, introducing nickel film from carbon film taken out from the growth device, placing into electron beam evaporation and deposition device, forming a carbon film at 300-600 nm thick on the nickel film with reconstructed graphene, depositing nickel film onto the carbon film using the graphene growth device, raising the temperature to 900-1200 degrees C and introducing argon gas for 25 minutes during annealing. USE - Graphene preparation method for nickel film annealing of wide area silicon carbide substrate. ADVANTAGE - Area of application is wide, thus providing for large scale batch production. DETAILED DESCRIPTION - A graphene preparation method involves cleaning in ammonia water and hydrogen peroxide, cleaning the silicon carbide substrate in hydrochloric acid and hydrogen peroxide, heating the reaction chamber to 1600 degrees C, removing scratches from the silicon carbide substrate, removing hydrogen etching-forming, producing the carbon film, adjusting the heating power supply voltage to attain temperature of 750-1150 degrees C, opening the vent valve, introducing argon and carbon tetrachloride gas into the quartz tube mixing chamber, reacting with silicon carbide for 20-100 minutes to generate carbon film, introducing nickel film from the carbon film taken out from the growth device, placing into electron beam evaporation and deposition device, forming a carbon film at 300-600 nm thick on the nickel film with reconstructed graphene, depositing nickel film onto the carbon film using the graphene growth device, raising the temperature to 900-1200 degrees C and introducing argon gas for 25 minutes during annealing with the nickel film covering the carbon film-forming graphene, removing the nickel film and producing graphene in the hydrochloric acid and copper sulfate solution to remove the nickel film. DESCRIPTION OF DRAWING(S) - The drawing is a flowchart of the graphene preparation process (Drawing includes non-English language text).