• 专利标题:   Preparing graphene involves taking graphene substrate material e.g. iron-nickel alloy, washing with ethanol, cleaning substrate after drying, introducing nitrogen gas to furnace, adding n-propyl benzene, subjecting to microwave processing.
  • 专利号:   CN104108701-A, CN104108701-B
  • 发明人:   CHEN X
  • 专利权人:   SUZHOU SHIYOUJIA ELECTRONIC TECHNOLOGY
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104108701-A 22 Oct 2014 C01B-031/04 201503 Pages: 4 Chinese
  • 申请详细信息:   CN104108701-A CN10286281 25 Jun 2014
  • 优先权号:   CN10286281

▎ 摘  要

NOVELTY - Preparation of graphene involves: taking graphene substrate material selected from iron-nickel alloy, washing with ethanol aqueous solution, cleaning the substrate after drying; placing the substrate in a high temperature furnace purged with nitrogen flow rate of 30 sccm, at 1050-1200 degrees C, keeping temperature constant; adding to furnace, n-propyl benzene, and stabilizing furnace to 1200 degrees C; slowly cooling and after cooling to room temperature, removing inner high temperature furnace component into deionized water; subjecting microwave processing and sonication at ultrasonic power. USE - For preparation of graphene (claimed). ADVANTAGE - The method uses n-propyl benzene with purity of greater than or equal to 99%. The method is simple, with low property and stone graphene carrier mobility. The prepared graphene product has thermal coefficient of 3133-3206 W/m K, carrier mobility of 1.75x 105cm2/Vs to 1.98asterisk105 cm2/Vs. DETAILED DESCRIPTION - Preparation of graphene involves: taking graphene substrate material selected from iron-nickel alloy, washing iron-nickel alloy with ethanol aqueous solution, cleaning the substrate after iron-nickel alloy material drying at 85-95 degrees C; placing the iron-nickel alloy substrate in a high temperature furnace purged with nitrogen with nitrogen flow rate of 30 sccm, at temperature of 1050-1200 degrees C, keeping the temperature constant; adding to high temperature furnace, n-propyl benzene, and stabilizing the high temperature furnace to 1200 degrees C; slowly cooling at cooling speed of 20-30 degrees C/minutes, preferably 30 degrees C/minute, and after cooling to room temperature, removing the inner high temperature furnace component into deionized water; subjecting microwave processing, at microwave processing power of 200-300 w, preferably 300 w, for 5-10 minutes, preferably 10 minutes to obtain microwave treatment solution; and then sonication of the microwave treatment water solution at ultrasonic power of 50 w, ultrasonic time of 20 minutes to obtain graphene.