▎ 摘　　要

NOVELTY - Growing method of aluminum nitride layer and gallium nitride layer on graphene by magnetic sputtering involves placing cleaned copper tube in a quartz tube furnace, vacuumizing, supplying hydrogen, and heating, supplying carbon source gas, cooling tube furnace and obtaining graphene, placing copper substrate into magnetron sputtering system, sputtering graphene and purging with nitrogen and argon, forming aluminum nitride film by sputtering graphene on carbon substrate using 5N purity-aluminum as target, and obtaining aluminum nitride layer. USE - Growing method of aluminum nitride layer and gallium nitride layer on graphene by magnetic sputtering (claimed). ADVANTAGE - The method is carried out easily. DETAILED DESCRIPTION - Growing method of aluminum nitride layer and gallium nitride layer on graphene by magnetic sputtering involves placing cleaned copper tube in a quartz tube furnace, vacuumizing for 10 minutes, supplying hydrogen, and heating at 1000?OC for 2 hours, supplying carbon source gas for 2 hours, cooling tube furnace to room temperature and obtaining graphene, placing copper substrate into a magnetron sputtering system, sputtering graphene, adjusting pressure of reaction chamber to 1Pa and purging with nitrogen and argon for 5 minutes, forming aluminum nitride film by sputtering graphene on carbon substrate using 5N purity-aluminum as target, and obtaining aluminum nitride layer, supplying a gas mixture of hydrogen and ammonia in metal organic chemical vapor deposition chamber with obtained layer for 5 minutes, heating at 600 degrees C for 20 minutes, chemical-vapor-depositing gallium nitride layer on the substrate by supplying hydrogen, ammonia and gallium source to chamber, and maintaining the reaction chamber temperature to 1000 degrees C.