▎ 摘　　要

NOVELTY - The element has a silicon substrate (1) and a distortion resistance film (8) which is formed in a surface of the silicon substrate. The distortion resistance film is formed of a graphene or a transition-metal dichalcogenide having monoatom layer thickness or several atoms layer thickness. USE - Distortion resistive element for pressure sensor, strain-gauge, acceleration sensor, and angular velocity sensor (all claimed). ADVANTAGE - The distortion resistive element with a high gage factor and a high detection sensitivity can be obtained. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the pressure sensor. Silicon substrate (1) Silicon dioxide layer (2) Opening (6) Displacement portion (7) Distortion resistance film (8)