▎ 摘　　要

NOVELTY - The transistor has a passivation layer (190) shielding a graphene channel (140) and a doping metal layer (160). The channel includes a doped graphene region (143) formed below the doping metal layer and formed in predetermined conductive type, a first graphene region (141) formed at a side of the doped graphene region and formed with a Fermi level different from that of the doped graphene region, and a second graphene region (142) opposite to the first graphene region based on the doped graphene region and formed with a Fermi level different from that of the doped graphene region. USE - Graphene transistor for an inverter (claimed) of an electronic device. ADVANTAGE - The transistor implements three channel resistance states and forms three stable output states due to drain current. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene transistor. Graphene channel (140) Graphene regions (141, 142) Doped graphene region (143) Doping metal layer (160) Passivation layer (190)