▎ 摘　　要

NOVELTY - Carbon-silicon carbide film is prepared. Silicon dioxide layer is deposited on obtained carbon-silicon carbide film, etched, side grid is carved, heated, reacted with chlorine, obtained product is placed in hydrofluoric acid solution, silicon dioxide layer is removed, obtained carbon film is placed in copper film, annealed, palladium layer and gold layer are formed on obtained graphene wafer product, etched, obtained product is soaked in acetone and dried, to obtain side-grid graphene transistor. USE - Manufacture of side grid graphene transistor (claimed). ADVANTAGE - The method efficiently provides side grid graphene transistor having high mobility ratio. DETAILED DESCRIPTION - ilicon substrate is cleaned, placed in chemical vapor deposition chamber evacuated at 10-7 mbar, hydrogen gas is introduced, heated to 1000-1150 degrees C, propane is added at flow rate of 40 sccm, carbonization reaction is performed for 4-8 minutes, carbon layer is grown, heated to 1150-1350 degrees C, propane-silane composite gas is introduced, heteroepitaxial growth is performed for 36-60 minutes and cooled to room temperature, to obtain carbon-silicon carbide film. Silicon dioxide layer having thickness of 0.5-1 mu m is deposited on obtained carbon-silicon carbide film using plasma enhanced chemical vapor deposition method, 3 %mass polymethylmethacrylate acrylic resin solution is coated on obtained silicon dioxide layer, baked at 180 degrees C for 60 seconds, irradiated using electron beam, etched using hydrofluoric acid solution, side grid is carved, placed in quartz tube, heated to 700-1100 degrees C, mixture containing argon gas and chlorine gas is introduced, reacted for 4-7 minutes, obtained product is placed in hydrofluoric acid solution, silicon dioxide layer is removed, obtained carbon film is placed in copper film, heated to 900-1100 degrees C in presence of argon gas, annealed for 10-30 minutes, carbon film is reconstructed within graphene, palladium layer and gold layer are formed on obtained graphene wafer product, 7 %mass polymethylmethacrylate acrylic resin solution is coated on obtained metal layer, baked at 180 degrees C for 60 seconds, exposed to electron beam radiation, etched, obtained product is soaked in acetone for 10 minutes and dried, to obtain side-grid graphene transistor.