▎ 摘　　要

NOVELTY - The substrate has a gate electrode layer formed on a glass substrate. An insulating layer is formed on the gate electrode layer of the glass substrate. A semiconductor layer is formed on the insulating layer. First and second n-type doped graphene layers are arranged at an equal interval and located at two end vertical upsides of the gate electrode layer. The first and second n-type doped graphene layers are partially overlapped with the gate electrode layer. A source electrode layer and a drain electrode layer are respectively formed on the first and second n-type doped graphene layers. USE - Array substrate for a semiconductor device. ADVANTAGE - The substrate utilizes the semiconductor layer and a metal electrode layer to improve performance of the semiconductor device. DETAILED DESCRIPTION - The semiconductor layer is formed with n-type doped graphene with nano-sized pattern. INDEPENDENT CLAIMS are also included for the following: (1) a display substrate manufacturing method (2) a display substrate (3) a display panel. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an array substrate.