▎ 摘　　要

NOVELTY - The method involves transferring a biopolymer membrane onto a handling wafer, where a passivation layer is formed on the biopolymer membrane. The graphene is transferred onto the passivation layer, where the graphene is patterned to form a graphene mesa. The source contact is formed on the graphene mesa, where a drain contact s formed on the graphene mesa. The passivation layer for surrounding the graphene mesa, a source contact and a drain contact to expose the biopolymer membrane is etched. The biopolymer membrane is released from the handling wafer, where the biopolymer membrane is dried after transferring the biopolymer membrane onto the handling wafer. The gate insulator (17) on the graphene mesa is formed, where a gate electrode is formed on the gate insulator. USE - Method of making a device, such as a polymer-based flexible semiconductor device. ADVANTAGE - The biopolymer membrane is transferred onto a handling wafer, where a passivation layer is formed on the biopolymer membrane, and hence enables reducing the signal-to-noise ratio and operates the transistors with a high drain voltage and a high gate potential. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a biocompatible graphene transistor fabricated on a bio-integrative biopolymer membrane. Bio-integrative biopolymer membrane (10) Channel (12) Source (14) Drain (16) Gate insulator (17) Gate (18) Polymer passivation layer (20)