▎ 摘　　要

NOVELTY - A graphene film (12) is formed on substrate (s1). A supporting film (14) is coated on the graphene film (12), and the substrate (s1) is removed. A graphene film (18) is formed on substrate (16). The graphene film (12) is supported by supporting film is transferred to the graphene film (18) formed on substrate (16). The substrate (16) is removed, such that the laminated graphene films (12,18) are supported by the supporting film. The laminated graphene films (12,18) are transferred onto substrate (s3), and the supporting film is removed, to obtain graphene film. USE - Manufacture of graphene film used for next-generation transistor and next-generation large-scale integration fine wiring. ADVANTAGE - The method enables manufacture of graphene film without deteriorating characteristics of graphene film due to residue of supporting film. DETAILED DESCRIPTION - A graphene film (12) is formed on substrate (s1). A supporting film (14) is coated on the graphene film (12). The substrate (s1) is removed, such that the graphene film (12) is supported by supporting film. A graphene film (18) is formed on substrate (16). The graphene film (12) is supported by supporting film is transferred to the graphene film (18) formed on substrate (16), such that the graphene film (12) is laminated on the graphene film (18). The substrate (16) is removed, such that the laminated graphene films (12,18) are supported by the supporting film. The laminated graphene films (12,18) are transferred onto substrate (s3), and the supporting film is removed, such that the laminated graphene films (12,18) are arranged on the substrate (s3), to obtain graphene film. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of manufacture of graphene film. Graphene films (12,18) Support film (14) Substrate (16)