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  • 专利标题:   Graphene ferroelectric device for e.g. optically switchable non-volatile memory comprises graphene transistor channel and ferroelectric gate of graphene transistor channel consisting of linear polarization at applied gate voltage.
  • 专利号:   WO2013048347-A1, US2014233297-A1, SG11201400809-A1, BR112014007724-A2
  • 发明人:   OZYILMAZ B, KAHYA O, TOH C T, JAISWAL M, SAHA S
  • 专利权人:   UNIV SINGAPORE NAT, OZYILMAZ B, KAHYA O, TOH C T, JAISWAL M, SAHA S
  • 国际专利分类:   B82Y010/00, G11B007/241, G11B009/02, G11C011/22, G11C011/56, G11C013/02, H01L029/16, H01L029/772, H01L043/02
  • 专利详细信息:   WO2013048347-A1 04 Apr 2013 H01L-029/772 201329 Pages: 41 English
  • 申请详细信息:   WO2013048347-A1 WOSG000366 01 Oct 2012
  • 优先权号:   US540593P, US569357P, US14346477

▎ 摘　　要

NOVELTY - A graphene ferroelectric device comprises graphene transistor channel and ferroelectric gate of graphene transistor channel consisting of linear polarization at 1st applied gate voltage less than threshold voltage and hysteretic polarization at 2nd applied gate voltage greater than threshold voltage. USE - A graphene ferroelectric device (claimed). ADVANTAGE - The device may be configured to enter reversible resistance state in response to photoillumination and is flexible and transparent, production costs are reduced, and lower consumption is achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for control method of resistance state of memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a graphene device in 2-terminal configuration.