• 专利标题:   Method for laser-assisted lossless transfer of chemical vapor deposition graphene, involves growing gallium nitride and copper layers on sapphire substrate in sequence, depositing graphene on copper layer in chemical vapor deposition mode.
  • 专利号:   CN103132047-A, CN103132047-B
  • 发明人:   HAO Y, NING J, HAN D, YAN Y, WANG D, ZHANG J, CHAI Z
  • 专利权人:   UNIV XIDIAN
  • 国际专利分类:   C23C016/01, C23C016/26
  • 专利详细信息:   CN103132047-A 05 Jun 2013 C23C-016/26 201373 Pages: 10 Chinese
  • 申请详细信息:   CN103132047-A CN10593930 31 Dec 2012
  • 优先权号:   CN10593930

▎ 摘  要

NOVELTY - A chemical vapor deposition graphene laser-assisted lossless transfer method involves growing gallium nitride and copper layers on sapphire substrate in sequence, followed by depositing graphene on copper layer in a chemical vapor deposition mode by changing growth thickness of the gallium nitride layer and laser wavelength energy, lifting off a substrate through laser to achieve the efficient transfer of the graphene. USE - Method for laser-assisted lossless transfer of chemical vapor deposition (CVD) graphene ADVANTAGE - The method enables laser-assisted lossless transfer of chemical vapor deposition graphene with high quality. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for laser-assisted lossless transfer of chemical vapor deposition (CVD) graphene.'(Drawing includes non-English language text)'