• 专利标题:   Phosphorus-doped graphene modified acrylonitrile butadiene styrene/polyethylene terephthalate alloy material includes phosphorus-doped graphene, acrylonitrile butadiene styrene, polyethylene terephthalate, and toughening agent.
  • 专利号:   CN113214591-A
  • 发明人:   GONG B, GONG R
  • 专利权人:   HUBEI KAIWEI HIGH POLYMER MATERIAL CO
  • 国际专利分类:   C08K003/04, C08K009/02, C08L025/14, C08L051/00, C08L051/02, C08L051/08, C08L055/02, C08L067/02
  • 专利详细信息:   CN113214591-A 06 Aug 2021 C08L-055/02 202182 Pages: 5 Chinese
  • 申请详细信息:   CN113214591-A CN10450695 26 Apr 2021
  • 优先权号:   CN10450695

▎ 摘  要

NOVELTY - A phosphorus-doped graphene modified acrylonitrile butadiene styrene/polyethylene terephthalate alloy material comprises 0.5-3 pts. wt. phosphorus-doped graphene, 71-75 pts. wt. acrylonitrile butadiene styrene, 5-8 pts. wt. polyethylene terephthalate and other additives including 5-9 pts. wt. toughening agent, 1-5 pts. wt. compatibilizer, 0.6-0.8 pts. wt. lubricant and 0.6-0.8 pts. wt. antioxidant. USE - Phosphorus-doped graphene modified acrylonitrile butadiene styrene/polyethylene terephthalate alloy material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the alloy material weighing dried components, fully mixing for 15-40 minutes in mixer, and discharging; and adding mixed material into double-screw extruder with rotating speed of 200-300 revolutions/minute, melting and extruding at 200-230 degrees C, cooling and granulating.