▎ 摘　　要

NOVELTY - The method involves providing a substrate. A graphene layer is formed on an upper surface of the substrate. An electrode layer is formed on an upper surface of the graphene layer. A supporting layer is formed on the upper surface of the graphene layer. The supporting layer covers the electrode layer. A laminated structure is mechanically peeled off from the electrode layer and the supporting layer from a surface of the graphene layer. The laminated structure is transferred to a target substrate. The supporting layer is removed. The electrode layer is leaving on a surface of the target substrate. The substrate comprises at least one of germanium layer, silicon carbide layer, germanium silicon layer, silicon layer, copper layer, nickel layer, ceramic layer and glass layer. The material of the electrode layer comprises at least one of metal and polycrystalline silicon. The organic solution comprises a photoresist solution. USE - Method for preparing an electrode layer in a semiconductor structure (claimed). ADVANTAGE - The electrode layer manufacturing process damage to the target substrate material is reduced, which is good for improving the device performance and reducing the manufacturing cost of the electrode layer. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing electrode layer in semiconductor structure (Drawing includes non-English language text).