• 专利标题:   Boron nitride-doped composite material includes doped graphene oxide and boron nitride in preset mass ratio.
  • 专利号:   CN105349114-A
  • 发明人:   SUN R, ZENG X, MA Y
  • 专利权人:   SHENZHEN INST ADVANCED TECHNOLOGY
  • 国际专利分类:   C09K005/14
  • 专利详细信息:   CN105349114-A 24 Feb 2016 C09K-005/14 201646 Pages: 10 English
  • 申请详细信息:   CN105349114-A CN10708906 27 Oct 2015
  • 优先权号:   CN10708906

▎ 摘  要

NOVELTY - A boron nitride-doped composite material includes doped graphene oxide and boron nitride in the mass ratio of 0.01-0.1:0.9-0.99. USE - Boron nitride-doped composite material (claimed). ADVANTAGE - The boron nitride-doped composite material has excellent thermal conductivity, and is prepared stably and economically by simple method under mild reaction condition. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of boron nitride-doped composite material, which involves mixing graphene oxide dispersion and boron nitride dispersion, forming mixed dispersion, and drying.