• 专利标题:   Inorganic thin film solar cell contains semiconductor layer which is formed by stacking p-type compound and n-type compound, graphene oxide layer which is doped with element and transparent electrode layer comprising conductive material.
  • 专利号:   KR2020114000-A
  • 发明人:   KIM J H, HA M J, KIM H J, CHANG J S, CHO E A
  • 专利权人:   UNIV CHONNAM NAT IND FOUND
  • 国际专利分类:   H01L031/0224, H01L031/0296, H01L031/032, H01L031/0445, H01L031/18
  • 专利详细信息:   KR2020114000-A 07 Oct 2020 H01L-031/0445 202085 Pages: 13
  • 申请详细信息:   KR2020114000-A KR035026 27 Mar 2019
  • 优先权号:   KR035026

▎ 摘  要

NOVELTY - An inorganic thin film solar cell comprises a board, a rear electrode which is formed on the substrate, a semiconductor layer which is formed by stacking a p-type compound and an n-type compound on the rear electrode, a graphene oxide layer which is formed on the semiconductor layer and doped with an element for increasing a work function, a transparent electrode layer which is formed on the graphene oxide layer and comprising conductive material having light transmittance and a front electrode which is formed on the transparent electrode layer. USE - Inorganic thin film solar cell. ADVANTAGE - The inorganic thin film solar cell can be controlled work function by doping graphene oxide with element, and has excellent photoelectric conversion efficiency by improving electromotive force generated between semiconductor layer and transparent electrode layer and reduced sheet resistance by increasing the electroconductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of the inorganic thin film solar cell.