• 专利标题:   Graphene synthesis method comprises disposing substrate including metal thin film in inner space of graphene synthesis chamber, depressurizing inner space, supplying gas of carbon into inner space using gas supplier and irradiating light.
  • 专利号:   US2020123658-A1
  • 发明人:   WON D, NAM W
  • 专利权人:   HANWHA AEROSPACE CO LTD, NPS CORP
  • 国际专利分类:   B82Y040/00, C23C016/26, C23C016/46, C23C016/48, C23C016/54
  • 专利详细信息:   US2020123658-A1 23 Apr 2020 C23C-016/46 202037 Pages: 24 English
  • 申请详细信息:   US2020123658-A1 US721782 19 Dec 2019
  • 优先权号:   KR023829, KR069490

▎ 摘  要

NOVELTY - Graphene synthesis method comprises: disposing a substrate including a metal thin film in an inner space of a graphene synthesis chamber (1500); depressurizing the inner space; supplying a gas including carbon into the inner space using a gas supplier; and irradiating a light to the inner space to heat the substrate using a main heating unit (1140), where a first auxiliary heating unit and a second auxiliary heating unit are disposed at both sides of the substrate, respectively, and spaced apart from each other so as to define an auxiliary space therebetween for synthesizing graphene on the substrate, and the substrate is disposed in the auxiliary space, and spaced apart from the first auxiliary heating unit and the second auxiliary heating unit. USE - The method is useful for synthesizing graphene. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a graphene synthesis chamber. Gas supply unit (1120) Gas discharge unit (1130) Main heating unit (1140) Metal thin film inlet/outlet unit (1150) Graphene synthesis chamber (1500)