▎ 摘　　要

NOVELTY - The gallium nitride (GaN) growing method involves providing gallium nitride substrate (1) put into CVD reaction chamber (2), providing reaction gas in reaction chamber (4) after heating reaction chamber by uniform heating temperature (3), heating reaction gas to growth temperature (6), growing graphene thin film to substrate in reaction chamber and introducing protective gas (7), and continuously filling protective gas to reaction chamber (8), and taking out substrate with grown graphene thin film after temperature of reaction chamber reaches room temperature. USE - Gallium nitride growing method for graphene thin film used for semiconductor. ADVANTAGE - Directly grows graphene thin film of gallium nitride using catalysis of gallium, and avoids series of problems of graphene transfer. Enhances mechanical strength of graphene thin film, and attains balance between conductivity and transparency. DETAILED DESCRIPTION - The material of the substrate comprises gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN) or aluminum indium gallium nitride (AlInGaN). The protection gas in CVD reaction chamber is inert gas, ammonia, or mixed gas. The reaction chamber is heated by electric heating or radiation heating. The reaction gas in reaction chamber is hydrogen or mixed hydrogen and carbon. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of the gallium nitride growing method for graphene thin film. Providing gallium nitride substrate (1) Put into CVD reaction chamber (2) Heating reaction chamber by uniform heating temperature (3) Providing reaction gas in reaction chamber (4) Heating reaction gas to growth temperature (6) Growing graphene thin film to substrate in reaction chamber and introducing protective gas (7) Continuously filling protective gas to reaction chamber (8)