▎ 摘　　要

NOVELTY - Preparing high-quality semiconductor epitaxial wafer comprises providing a group III metal-organic source mixed precursor containing uniformly dispersed nanomaterials; coating the group III metal-organic source mixed precursor on the substrate to obtain a group III metal-organic source mixed precursor coating layer, placing the substrate with the group III metal-organic source mixed precursor coating layer in MOCVD reaction chamber, introducing into the group III metal-organic source, annealing and recrystallizing in the mixed atmosphere of the group V element source and reducing gas, thus, forming uniformly distributed nanomaterials and III-V compound nanostructures, obtaining stress release buffer layer; growing a semiconductor epitaxial structure on the stress release buffer layer, obtaining high-quality semiconductor epitaxial wafer. USE - The high-quality semiconductor epitaxial wafer used in optoelectronic device. ADVANTAGE - The method: can prepares the metal organic source coating layer on the substrate, and at the same time combines the MOCVD reaction chamber annealing and recrystallization, metal organic source coating layer dispersed with nanometer materials gradually forms two kinds of crystal nuclei distribution to provide nucleation centers, gradually releases stress of the epitaxial layer, strengthens lateral epitaxial growth, suppresses extension of the dislocation density of the epitaxial layer, reduces defect density, improves growth quality of the quantum well light-emitting layer, improves the leakage performance and luminous efficiency, and improves the uniformity of the luminous wavelength, which can meet the uniform performance requirements for Micro-LED epitaxy.