▎ 摘　　要

NOVELTY - The transistor has a source electrode, and a drain electrode that includes graphene and is connected to the source electrode. An insulating material layer is equipped in the lower portion of graphene and is etched selectively. The Piezo material is equipped in the lower portion of graphene and in the etched position of the insulating material layer. A crossed obstacle regulating circuit of graphene is equipped in the lower portion of Piezo material. The height of Fermi level is controlled between graphene and drain electrode. USE - Transistor such as graphene single electron transistor and electron tunneling graphene transistor (all claimed) for controlling on/off of electricity. ADVANTAGE - The processing speed of transistor is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the transistor.