• 专利标题:   Manufacturing method of silicon semiconductor element for organic LED, involves producing device structure using the polycrystalline silicon which is formed on graphene.
  • 专利号:   KR2014105234-A
  • 发明人:   RHO J, CHOI M, KIM T
  • 专利权人:   LG ELECTRONICS INC
  • 国际专利分类:   H01L029/786, H01L051/50
  • 专利详细信息:   KR2014105234-A 01 Sep 2014 H01L-029/786 201474 Pages: 16
  • 申请详细信息:   KR2014105234-A KR019213 22 Feb 2013
  • 优先权号:   KR019213

▎ 摘  要

NOVELTY - The method involves forming (S10) graphene on a metallic board. The device structure is produced (S30) using the polycrystalline silicon which is formed on the graphene. The final substrate is adhered (S40) on a device structure and metallic board is separated (S50). USE - Manufacturing method of silicon semiconductor element for organic LED (all claimed) used in mobile communication terminal, car navigation system, personal digital assistant and camcorder. ADVANTAGE - High quality silicon semiconductor element is obtained efficiently. The manufacture of the organic LED is performed efficiently. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) silicon semiconductor element; and (2) organic LED. DESCRIPTION OF DRAWING(S) - The drawing shows a (Drawing includes non-English language text) Step for forming graphene on silicon board (S10) Step for crystallizing amorphous silicon (S20) Step for producing device structure (S30) Step for adhering final substrate (S40) Step for separating metallic board (S50)