• 专利标题:   Synthesis of graphene used in e.g. electronic applications, involves reacting drawn catalytic substrate with precursor gas containing hydrocarbon gas and hydrogen gas to form continuous single crystal graphene.
  • 专利号:   US2018187331-A1, WO2018125591-A1, US10233566-B2
  • 发明人:   LIST F A, STEHLE Y Y, VLASSIOUK I V, SMIRNOV S N
  • 专利权人:   UTBATTELLE LLC, UTBATTELLE LLC
  • 国际专利分类:   C23C016/26, C23C016/54, C30B025/02, C30B025/10, C30B025/14, C30B025/18, C30B029/02, C23C016/455
  • 专利详细信息:   US2018187331-A1 05 Jul 2018 C30B-025/02 201851 Pages: 18 English
  • 申请详细信息:   US2018187331-A1 US393464 29 Dec 2016
  • 优先权号:   US393464

▎ 摘  要

NOVELTY - Synthesis of graphene involves heating the interior of a chemical vapor deposition chamber (10) to more than 800 degrees C, drawing a catalytic substrate (16) through the interior in a lengthwise direction, introducing hydrocarbon gas through the opening (34) in a region above the catalytic substrate,, flowing hydrogen gas through the chamber in lengthwise direction, form a precursor gas mixture (34) comprising hydrocarbon gas and hydrogen gas, reacting the substrate with the precursor gas mixture, to form continuous single crystal graphene (50) on the substrate which is drawn in the same direction as the flow of hydrogen gas. USE - Synthesis of graphene used as electronic material, photovoltaic material and desalination membrane. ADVANTAGE - The method facilitates economical production of continuous single crystal graphene, within a short period of time. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a chemical vapor deposition chamber. Chemical vapor deposition chamber (10) Catalytic substrate (16) Hydrogen gas inlet (32) Hydrocarbon precursor supply opening (34) Continuous single crystal graphene (50)