• 专利标题:   High photoluminescence performance graphene-porous silicon material comprises graphene which is covered on porous silicon to form composite structure.
  • 专利号:   CN106883841-A, WO2018145331-A1, CN106883841-B
  • 发明人:   GE D, ZHANG L, QIAN D, CHENG G, DING J
  • 专利权人:   UNIV JIANGSU, UNIV JIANGSU
  • 国际专利分类:   C09K011/02, C09K011/59, C23C016/26, C25F003/12
  • 专利详细信息:   CN106883841-A 23 Jun 2017 C09K-011/02 201761 Pages: 8 Chinese
  • 申请详细信息:   CN106883841-A CN10070580 09 Feb 2017
  • 优先权号:   CN10070580

▎ 摘  要

NOVELTY - A high photoluminescence performance graphene-porous silicon material comprises graphene which is covered on porous silicon to form composite structure. The photoluminescence performance of graphene-porous silicon is 7.9 times that of the porous silicon monomer. USE - High photoluminescence performance graphene-porous silicon material (claimed). ADVANTAGE - The graphene-porous silicon material has high porous silicon optical properties and broad application prospect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of graphene-porous silicon material with high photoluminescence properties, involves preparing monolayer graphene on copper foil by chemical vapor deposition to obtain graphene-coated copper foil, selecting n-type monocrystalline silicon wafer for double-sided polishing, washing the treated n-type monocrystalline silicon wafer with anhydrous ethanol, ultrasonically cleaning with deionized water, and drying, subjecting dried n-type monocrystalline silicon wafer to electrochemical etching in hydrofluoric acid/absolute ethanol mixed solution, completing electrochemical corrosion with deionized water, and drying to obtain porous silicon, cutting polystyrene-coated copper foil so that the size is provided corresponding to the size of porous silicon, placing the copper foil on the glass sheet, transferring glass sheet onto a shredder and spotting poly(methyl methacrylate) gum, transferring to the baking table for baking, placing baked glass sheet in ammonium persulfate solution to etch the copper foil substrate, washing with deionized water for every 10 minutes until the copper foil is completely disappeared, contacting porous silicon surface with graphene floating on the surface of the ammonium persulfate solution to obtain graphene and porous silicon composite material, and placing graphene and porous silicon composite materials in acetone for 10 minutes to remove glue.