▎ 摘　　要

NOVELTY - The method involves uniformly covering silicon chip as a chip source with graphene (1). The chip source is dehydrated and baked. A nitrogen gun is used to purge the chip source to remove surface particle contaminants. An electron beam photoresist is spin-coated on a front of a film source, and baked. The L-edit software is used to draw an exposure layout. An exposure file is edited. An electron beam exposure is performed. A graphene pattern (5) that needs to be etched away is exposed. The exposed graphene is removed using the plasma. The film source is directly spin-coated with ZEP 520A photoresist (3), and baked. An electron beam evaporation coating instrument is used to deposit titanium and gold (6) on the film source successively, and the temperature at the sample stage is controlled to be less than 100° C. The film source is put into 70° C methyl ethyl ketone to statically soak for 30 minutes, and a dropper is used to peel off the excess gold film. USE - Method of preparing integrated large area two-dimensional material device. ADVANTAGE - The manufacturing steps of the photolithography mask are omitted, which is very flexible and convenient, has very high processing efficiency, and has nano-level processing accuracy. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method of preparing integrated large area two-dimensional material device. 1Graphene 2Silicon substrate 3ZEP 520A photoresist 4Cross mark 5Graphene pattern 6Titanium and gold