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  • 专利标题:   Manufacture of graphene oxide thin film involves manufacturing oxidized graphite target, forming target on substrate by depositing graphene oxide thin film by radiofrequency magnetron sputtering method.
  • 专利号:   KR2014043420-A, KR1393096-B1
  • 发明人:   HONG H S, UK K S, NGUYEN T K, HAHN S H, KIM S W
  • 专利权人:   UNIV ULSAN FOUND IND COOP
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   KR2014043420-A 09 Apr 2014 C01B-031/02 201430 Pages: 17
  • 申请详细信息:   KR2014043420-A KR022265 25 Feb 2014
  • 优先权号:   KR027180, KR022265

▎ 摘　　要

NOVELTY - Oxidized graphite target is manufactured, and obtained target is formed on the substrate by depositing graphene oxide thin film by radiofrequency magnetron sputtering method in argon/oxygen mixed gas atmosphere. USE - Manufacture of graphene oxide thin film (claimed). ADVANTAGE - The method efficiently and economically provides graphene oxide thin film by simple method, without affecting the human body. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of restored graphene oxide.