▎ 摘　　要

NOVELTY - Bulk structure gallium arsenide photoconductive switch comprises a gallium arsenide substrate (1), a cathode contact electrode (2), an anode contact electrode (3), an external electrode (4), a light receiving hole (5) and a graphene layer, where the cathode contact electrode is provided on the lower surface of the gallium arsenide substrate. The anode contact electrode is provided on the upper surface of the gallium arsenide substrate. A graphene layer is provided between the anode contact electrode and the gallium arsenide substrate. The external electrode is provided on the upper surface of the anode contact electrode. The light receiving hole penetrates the external electrode and the anode contact electrode. The upper surface of the gallium arsenide substrate is also covered with a passivation layer (6). The anode contact electrode comprises nickel layers, germanium layer, and gold layers, which are arranged from bottom to top. USE - Bulk structure gallium arsenide photoconductive switch. ADVANTAGE - The bulk structure gallium arsenide photoconductive switch ensures great effect on the heat dissipation and life of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing bulk structure gallium arsenide photoconductive switch, which involves using a gallium arsenide substrate, a cathode contact electrode, an anode contact electrode, an external electrode, a light receiving hole and a graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the bulk structure gallium arsenide photoconductive switch. Gallium arsenide substrate (1) Cathode contact electrode (2) Anode contact electrode (3) External electrode (4) Light receiving hole (5) Passivation layer (6)