▎ 摘　　要

NOVELTY - Epitaxial gallium nitride (GaN) with diamond as substrate comprises a diamond substrate, a single-layer or multi-layer graphene layer arranged on a diamond substrate, an aluminum nitride layer sputtered on the graphene layer, and a gallium nitride thin film epitaxially grown on the aluminum nitride. USE - Used as epitaxial GaN with diamond as substrate. ADVANTAGE - The method improves the disadvantages of the pits to the growth of aluminum nitride, it can also eliminate the lattice mismatch and thermal mismatch between diamond and aluminum nitride, eliminates the tensile stress or compressive stress in the crystal, greatly improves the crystal quality of sputtered aluminum nitride, at the same time, the lattice constants of aluminum nitride and GaN are very close, and the quality of the epitaxial GaN layer has also been greatly improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the epitaxial GaN with diamond as substrate.