▎ 摘　　要

NOVELTY - The method involves providing and transferring a semiconductor substrate with a graphene layer to a reaction chamber. Water physically adhered on a surface of the graphene layer to be reacted with a metal source is utilized as an oxidant to generate a metal oxide film as a nucleating layer. The nucleating layer and the water are utilized as the oxidant to be reacted with a hafnium source. A hafnium oxide grid medium layer is generated on the graphene layer. The metal oxide film is an aluminum oxide film. The metal source is provided with trimethyl aluminum. USE - Method for preparing a graphene base FET. ADVANTAGE - The nucleating layer and the water are utilized as the oxidant to be reacted with the hafnium source to form the metal oxide film layer as the nucleating layer, so that the high-quality hafnium oxide grid medium film layer with high uniformity and coverage rate is prepared on the surface of the graphene layer by an atom deposition technology, thus improving performance of the graphene base FET. DETAILED DESCRIPTION - The hafnium source is provided with tetraethyl methyl amino hafnium. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating steps involved in a graphene base FET preparing method.'(Drawing includes non-English language text)'