▎ 摘　　要

NOVELTY - The transistor has gate electrode that is placed on first insulator layer. A second insulator is placed on gate electrode. The source and drain electrodes are placed over second insulator. A graphene layer is provided in source and drain electrodes. The graphene layer is isolated between second insulator layer and gate electrode through air gap. The insulator layers are made of silicon nitride, silicon dioxide, tantalum pentoxide, hafnium oxide, aluminum oxide, or zirconium oxide respectively. USE - Graphene transistor used in carbon based integrated circuit. ADVANTAGE - The degradation of surface characteristics of graphene is reduced, so that electrical characteristics of graphene transistor are improved. The graphene layer is isolated between second insulator layer and gate electrode through air gap to increase mobility of current carriers in transistor, so that quality of transistor is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for manufacturing graphene transistor. DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view of graphene transistor.