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  • 专利标题:   Formation of band-gap in graphene raw material used for e.g. light reception and light-emitting devices, involves forming graphene film on surface having nanosize porous holes active on graphene.
  • 专利号:   JP2014065617-A
  • 发明人:   HASUO T, KUBOTA H, FUKUYAMA H, HOMMA Y, SAITO S, MASUDA H
  • 专利权人:   KYUSHU MITSUI ALUMINIUM KOGYO
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B031/02, C25D011/04, C25D011/12, C25D011/16, C25D011/18
  • 专利详细信息:   JP2014065617-A 17 Apr 2014 C01B-031/02 201430 Pages: 21 Japanese
  • 申请详细信息:   JP2014065617-A JP210152 24 Sep 2012
  • 优先权号:   JP210152

▎ 摘　　要

NOVELTY - Formation of band-gap involves forming graphene film (10) on surface having nanosize porous holes (8) active on graphene, and forming band-gap in the same graphene film. USE - Formation of band-gap in graphene raw material used for electronic device with high electron mobility, light reception and light-emitting devices and electronic integrated and optical integrated circuits. ADVANTAGE - The method enables formation of large band-gap in graphene raw material, by a simple method. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) formation of band-gap generation structure (12); (2) adjustment method of band-gap width; and (3) use of aluminum as substrate for graphene formation. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of graphene film. Holes (8) Oxide film (9) Anodized film (9b) Graphene film (10) Band-gap generation structure (12)