▎ 摘　　要

NOVELTY - The preparation method involves pre-processing the quartz substrate. The pre-treated quartz substrate is placed on the magnetron sputtering target base. The magnetron sputtering method is used to form SiO2 nano-particles on the quartz substrate. The quartz substrate is put after magnetic control sputtering treatment into the annealing furnace, under the condition of air flow. The substrate is put in acetone, absolute ethyl alcohol and de-ionized water for ultrasonic cleaning. The sputtering power of the magnetic control sputtering method is 50 to 150 watt. The magnetic control sputtering time is 1 to 60 minutes. USE - Preparation method for graphene film substrate. ADVANTAGE - Preparation method for graphene film substrate has less defects, high film quality and smaller resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view of a preparation method. (Drawing includes non-English language text).