▎ 摘　　要

NOVELTY - The utility model claims a semiconductor device area, especially relatING to a graphene site effect transistor, comprising the graphene layer on groove formed flexible substrate, grid electrode dielectric medium layer, source electrode and drain electrode electrode on the graphene layer forming the groove two side and the grid electrode on forming groove of grid dielectric medium layer, wherein said grid electrode dielectric medium layer is formed on said source electrode and drain pole electrode and gate electrode to take between source electrode and drain electrode and grid electrode electrode. Theutility model with flexible substrate by graphene site effect transistor is more suitable for each flexible device, the similar structure of column shape decreases occupied substrate area to save space for better implementation of integrated by distributing the component.