• 专利标题:   Creating layers of graphene, comprises implanting carbon atoms into a substrate at first temperature and lowering temperature of the substrate, so that the carbon atoms diffuse from substrate.
  • 专利号:   US2010323113-A1, WO2010148001-A1, TW201100324-A
  • 发明人:   RAMAPPA D A, SULLIVAN P, RAMAPPA D
  • 专利权人:   RAMAPPA D A, SULLIVAN P, VARIAN SEMICONDUCTOR EQUIP ASSOC INC
  • 国际专利分类:   B05D003/00, C23C014/06, C23C014/48, C23C014/58, C01B031/04, H01L021/225, H01L021/265
  • 专利详细信息:   US2010323113-A1 23 Dec 2010 B05D-003/00 201103 Pages: 12 English
  • 申请详细信息:   US2010323113-A1 US487100 18 Jun 2009
  • 优先权号:   US487100

▎ 摘  要

NOVELTY - Method of creating layers of graphene, comprises: implanting carbon atoms into a substrate at a first temperature; and lowering the temperature of the substrate following the implanting step, so that the carbon atoms diffuse from the substrate. USE - The method is useful for creating layers of graphene or graphene-based compounds (all claimed). ADVANTAGE - The method provides finer growth of graphene in large scale. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of creating layers of graphene-based compounds, comprising: implanting carbon atoms into a substrate at a first temperature; implanting atoms of a second species into the substrate; and lowering the temperature of the substrate following the carbon implanting step, so that the atoms of the second species bond to the carbon atoms and the carbon and the second species diffuse from the substrate.