▎ 摘　　要

NOVELTY - Producing low-temperature graphene grown substrate, comprises (a1) providing a substrate, (b1) supplying carbon-containing gas (300) at less than or equal to 500 degrees C, and performing inductively coupled plasma-chemical vapor deposition, and (c1) growing graphene (500) on the substrate without provided with a catalyst layer of Van der Waals heteroepitaxial growth type or Van der Waals growth type generated growth type as nuclei on the surface of the substrate, and adsorbing and diffusing hydrocarbon radicals. USE - The substrate is useful for producing electrical components (claimed). ADVANTAGE - The substrate is catalyst-free (claimed). DETAILED DESCRIPTION - Producing low-temperature graphene grown substrate, comprises either: (a1) providing a substrate, (b1) supplying carbon-containing gas (300) at less than or equal to 500 degrees C, and performing inductively coupled plasma-chemical vapor deposition, and (c1) growing graphene (500) on the substrate without provided with a catalyst layer of Van der Waals heteroepitaxial growth type or Van der Waals growth type generated growth type as nuclei on the surface of the substrate, and adsorbing and diffusing hydrocarbon radicals; (a2) forming a substrate layer (100) on the substrate by loading the substrate into a deposition chamber, (b2) forming the low-temperature graphene grown substrate by supplying carbon-containing gas through inductively coupled plasma-chemical vapor deposition, and (c2) sequentially loading the substrate into the deposition chamber and an inductively coupled plasma-chemical vapor deposition chamber using a load-locked chamber; (a2), (b3) selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into the chamber, (c3) loading a substrate into the inductively coupled plasma-chemical vapor deposition chamber, and forming the low-temperature graphene grown substrate by supplying carbon-containing gas through inductively coupled plasma-chemical vapor deposition, and (d3) sequentially loading the substrate using the load-locked chamber; (a2), (b4) performing chemical mechanical polishing on the substrate layer which is formed on the substrate by loading the substrate into a chemical mechanical polishing chamber, (c3), and (d3); (a2), (b4), (c5) selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into the chamber, (d5) loading a substrate into the inductively coupled plasma-chemical vapor deposition chamber, and forming the low-temperature graphene grown substrate by supplying carbon-containing gas through inductively coupled plasma-chemical vapor deposition, and (e5) sequentially loading the substrate using the load-locked chamber; (a6) forming the substrate layer on the substrate, (b6) performing uniform density distribution of the carbon containing gas on the substrate layer, (c6) performing inductively coupled plasma-chemical vapor deposition, and (d6) growing graphene on the substrate without provided with a catalyst layer of Van der Waals heteroepitaxial growth type or generated growth type as nuclei on the surface of the substrate, and adsorbing and diffusing hydrocarbon radicals; (a6), (b7) increasing the density of the carbon contained gas in certain areas of the substrate layer, (c6), (d6), (e7) growing graphene along the parallel direction from the certain areas of the substrate layer, and (f7) forming graphene large crystals; (a6), (b6), (c6), and (d8) growing graphene on the substrate without provided with a catalyst layer of Van der Waals growth type generated growth type as nuclei on the surface of the substrate, and adsorbing and diffusing hydrocarbon radicals; (a6), (b9) increasing the density of the carbon contained gas in certain areas of the substrate layer, (c6), (d8), (e7), and (f7); or (a10) growing graphene in a first direction which is parallel to the surface of the substrate, and direct contacting graphene with the surface, and (b10) growing graphene in a second direction which is parallel to the surface, and direct contacting graphene with the surface. INDEPENDENT CLAIMS are also included for: (1) low-temperature graphene grown substrate direct contacting with the surface of the substrate and having crystal grain diameter in the first direction parallel or perpendicular to the surface greater than the crystal grain diameter in the different direction parallel or perpendicular to the surface and multiple crystal grain boundaries along the first and second directions, and single crystal surrounded by the crystal grain boundary; (2) low-temperature graphene grown substrate producing device comprising a gas supplying unit for supplying the carbon-containing gas, a gas ejecting unit for ejecting the carbon-containing gas supplied from the gas supplying unit, the substrate having the substrate layer arranged in contact with the carbon-containing gas ejected from the gas ejecting unit, a heating unit for heating the some region of the substrate, and an inductively coupled plasma forming unit for forming the inductively coupled plasma within the chamber by a inductive magnetic field which is formed by applying high-frequency power; and (3) platform comprising the low-temperature graphene grown substrate producing device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the low-temperature graphene grown substrate producing device. Substrate layer (100) Carbon-containing gas (300) Graphene (500)