▎ 摘　　要

NOVELTY - Preparing two-dimensional gallium nitride material, comprises preparing two-dimensional gallium selenide by chemical vapor deposition using gallium selenide powder as a precursor, placing in a tube furnace containing a nitrogen source for high-temperature nitriding treatment using two-dimensional gallium selenide as a template. USE - The method is useful for preparing two-dimensional gallium nitride material. ADVANTAGE - The two-dimensional gallium nitride material has ultra-wide forbidden band, compared with common graphene 2-dimensional transition metal sulfide and so it is expected to be a two- dimensional material of ultra wide forbidden band. The method is very convenient, the method only comprises preparation of template and high temperature nitriding two steps, and the two steps can be finished in the tubular furnace. It changes the size and thickness of the 2D gallium selenide template by changing the parameters e.g. air pressure, growth time and so on, so as to realize the controllable preparation of the two DGN material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a two-dimensional gallium nitride material.