• 专利标题:   Method for forming graphene-substrate composite structure, involves fixing substrate through chemical vapor deposition chamber continuously at certain rate, where chemical vapor deposition in chemical vapor deposition chamber is deposited on substrate.
  • 专利号:   CN113772663-A
  • 发明人:   QI Y, CHENG Y, LI J, SHI P, LIU Z
  • 专利权人:   UNIV PEKING, BEIJING GRAPHENE INST
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN113772663-A 10 Dec 2021 C01B-032/186 202220 Chinese
  • 申请详细信息:   CN113772663-A CN11134092 27 Sep 2021
  • 优先权号:   CN11134092

▎ 摘  要

NOVELTY - The method involves fixing a substrate through a chemical vapor deposition chamber continuously at certain rate, where chemical vapor deposition in the chemical vapor deposition chamber is deposited on the substrate. USE - Method for forming a graphene-substrate composite structure (claimed). ADVANTAGE - The method enables making the substrate continuously depositing graphene by the chemical vapour deposition chamber to continuously deposit a graphene layer on a surface of the substrate to non-limit graphene by length of the substrate, and realizing continuous and rapid forming of a graphene-substrate composite structure and ensuring high repeatability and easy maintaining of different batch process consistency. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a graphene-substrate composite structure. Reaction chamber (2) Conveying wheel (4) Collecting wheel (5) Quartz fibre cloth (6)