▎ 摘　　要

NOVELTY - The chip has an n-type electrode attached with a nitride epitaxial layer. The nitride epitaxial layer is fixed to a P-type electrode. A SiC substrate is provided with a nitride LED epitaxial wafer and a graphene layer. The nitride epitaxial layer is connected with the graphene layer. The nitride epitaxial layer is divided into a n-type buffer layer, an n-type electronic injection layer, an active layer and a p-type hole injection layer. The n-type electrode is connected with the n-type buffer layer. The active layer is connected with a z-type thin film layer. USE - SiC substrate based nitride LED thin film flip chip. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a SiC substrate based nitride LED thin film flip chip manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a SiC substrate based nitride LED thin film flip chip.