▎ 摘　　要

NOVELTY - The device (100) has a source region (103s) and a drain region (103d) which are configured to sandwich a channel region (103a) in between. A gate insulating film (104a) is provided on a channel region. A graphene film (111) is provided on the gate insulating film. A doping layer (112) is provided on the graphene film for doping the graphene film. A protective film is configured to cover the doping layer. The doping layer contains the self-organization unimolecular layer provided with the functional group which contacts the graphene film. USE - Semiconductor device such as large scale integrated circuit. ADVANTAGE - The threshold voltage of a transistor can be adjusted flexibly by containing doping layer. The work function of the graphene film can be changed freely and the threshold voltage of a transistor can be adjusted flexibly. The formation of an interface state and the diffusion of the foreign material to gate insulating films can be avoided. The threshold voltage can be adjusted by changing the surface density of the doping layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor device. (Drawing includes non-English language text) Semiconductor device (100) Channel region (103a) Drain region (103d) Source region (103s) Gate insulating film (104a) Graphene film (111) Doping layer (112)